【摘要】 金刚石半导体逻辑电路的发展，离不开性能优秀的增强型器件。六硼化镧（LaB₆）作为氢终端金刚石场效应管（FET）的栅介质材料有望通过其较低的功函数，与氢终端金刚石表面接触产生高肖特基势垒将沟道空穴耗尽，实现常关特性。以LaB₆为栅极材料，制备了增强型氢终端金刚石FET。在不同栅长下，该器件的阈值电压(V_TH)为-0.12～-0.26 V。在栅长（L_G）为4μm,栅极电压（V_G）为-7 V时，器件的最大输出电流(I_DSmax)为-126 mA/mm。此器件的开关比为10⁸数量级，不同栅长下亚阈值摆幅为90.5～149.3 mV/dec。器件的有效空穴迁移率(μ_eff)高达191.8 cm²/（V·s）。利用肖特基势垒耗尽沟道载流子不损伤载流子的本征特性，栅介质材料与栅电极同时沉积也避免了界面处的污染，该技术将促进增强型金刚石FET的发展。更多还原

【Abstract】 The development of diamond semiconductor logic circuits cannot be separated from enhanced devices with excellent performance.As the gate dielectric material of hydrogen-terminated diamond field effect tube（FET）, Lanthanum hexaboride（LaB₆） is expected to produce high Schottky barrier in contact with the surface of hydrogen-terminated diamond through its low work function, which will deplete the channel holes and achieve the normally closed property.An enhancement-mode hydrogen-terminated FET is realized by using LaB₆.At different gate lengths, the threshold voltage(V_TH) of the device ranges from-0.12 V to-0.26 V.When the gate length（L_G） is 4 μm and the gate voltage（V_G） is-7 V, the maximum output current(I_DSmax) of the device is-126 mA/mm.The on/off ratio of this device is 10⁸ orders of magnitude, and the subthreshold swing ranges from 90.5 mV/dec to 149.3 mV/dec under different grid lengths. The effective hole mobility(μ_eff) of the device is up to 191.8 cm²/（V·s）.The use of Schottky barrier depletion channel carrier does not damage the intrinsic characteristics of the carrier, gate dielectric material and gate electrode deposition at the same time to avoid the interface pollution, this technology will promote the development of enhanced diamond FET.更多还原