节点文献

Electric Field-Controlled Interfacial Polarization Coupling in van der Waals Ferroelectric Heterojunctions

推荐 CAJ下载
PDF下载
不支持迅雷等下载工具，请取消加速工具后下载。

【Author】 Wei Li;HengLiu;Hualing Zeng;International Center for Quantum Design of Functional Materials, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China;Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, Chinese Academy of Sciences,University of Science and Technology of China;Hefei National Laboratory, University of Science and Technology of China;

【通讯作者】曾华凌;

【机构】 International Center for Quantum Design of Functional Materials, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China； Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, Chinese Academy of Sciences,University of Science and Technology of China； Hefei National Laboratory, University of Science and Technology of China；

【摘要】 Recent advances in van der Waals（vdW） ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial electrical characteristics play a crucial role in determining their performance and functionality. In this study,we explore the interfacial polarization coupling in two-dimensional（2D） ferroelectric heterojunctions by fabricating a graphene/h-BN/CuInP₂S₆/α-In₂Se₃/Au ferroelectric field-effect transistor. By varying the gate electric field, the CuInP₂S₆/α-In₂Se₃ heterojunction displays distinct interfacial polarization coupling states, resulting in significantly different electrical transport behaviors. Under strong gate electric fields, the migration of Cu ions further enhances the interfacial polarization effect, enabling continuous tuning of both the polarization state and carrier concentration in α-In₂Se₃. Our findings offer valuable insights for the development of novel multifunctional devices based on 2D ferroelectric materials.更多还原

【Abstract】 Recent advances in van der Waals（vdW） ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial electrical characteristics play a crucial role in determining their performance and functionality. In this study,we explore the interfacial polarization coupling in two-dimensional（2D） ferroelectric heterojunctions by fabricating a graphene/h-BN/CuInP₂S₆/α-In₂Se₃/Au ferroelectric field-effect transistor. By varying the gate electric field, the CuInP₂S₆/α-In₂Se₃ heterojunction displays distinct interfacial polarization coupling states, resulting in significantly different electrical transport behaviors. Under strong gate electric fields, the migration of Cu ions further enhances the interfacial polarization effect, enabling continuous tuning of both the polarization state and carrier concentration in α-In₂Se₃. Our findings offer valuable insights for the development of novel multifunctional devices based on 2D ferroelectric materials.更多还原

【关键词】 ferroelectric； interfacial； fabricating； functionality； enabling； tunable； Polarization； migration； volatile； determining；

【基金】 supported by the Chinese Academy of Sciences Project for Young Scientists in Basic Research (Grant No. YSBR-049);the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302800);the Fundamental Research Funds for the Central Universities (Grant No. WK3510000013)

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2025年05期

【分类号】O469
【下载频次】1

知网节下载

节点文献中：

本文链接的文献网络图示:

本文的引文网络

节点文献