【摘要】 采用传统固相法制备了La³⁺掺杂的0.28Pb(In_1/2Nb_1/2)O₃-0.32Pb(Zn_1/3Nb_2/3)O₃-0.3PbTiO₃-0.1PbZrO₃（PIN-PZN-PZT）四元压电陶瓷，研究了La³⁺掺杂量对PIN-PZN-PZT四元压电陶瓷微观结构和电学性能的影响。结果表明：引入La³⁺可以增强压电陶瓷局部结构异质性，进而提升介电弛豫特性并提高压电性能。当La₂O₃含量为1.5%时，获得了兼具高电致应变（0.23%）和高居里温度（206℃）的压电陶瓷材料。更多还原

【Abstract】 La³⁺-doped 0.28Pb(In_1/2Nb_1/2)O₃-0.32Pb(Zn_1/3Nb_2/3)O₃-0.3PbTiO₃-0.1PbZrO₃（PIN-PZN-PZT） quaternary piezoelectric ceramics were prepared by the conventional solid-phase method,and the effects of La³⁺ doping on the microstructures and electrical performances of PIN-PZN-PZT quaternary piezoelectric ceramics were investigated.The results show that introducing La³⁺ can enhance the local structural heterogeneity of piezoelectric ceramics,enhancing the dielectric relaxation properties to improve the piezoelectric performance.When the La₂O₃ content was 1.5%,piezoelectric ceramic materials with high electrically induced strain （0.23%） and high Curie temperature （206℃） were obtained.更多还原