【摘要】 近年来，半导体材料在光电转化、光热转化、电池储能等方面的优势展现出了广阔应用前景而迅速发展。随着研究的深入，界面形成机理、电子结构、电荷转移过程的构效关系成为设计新型半导体器件、新材料研究的热点，支持能源催化、界面功能构筑和芯片器件等重大领域的发展，因此准确测量半导体薄膜材料的能级结构非常重要。测量半导体薄膜材料全能级结构常用X射线光电子能谱（XPS）、紫外光电子能谱（UPS）以及反光电子能谱（IPES）三种表征方法，重点介绍了三种表征方法的研究对象、理论基础与测量原理、测量方法与能级结构识别的方法对半导体薄膜材料全能级结构的测量。最后通过实际案例进行了数据分析和讨论。三种表征技术具有互补性，可以从能量角度给出更有效的信息，这对半导体薄膜材料制备、杂质掺杂、功能和性能优化具有重要意义。更多还原

【Abstract】 In recent years,the advantages of semiconductor materials in photoelectric conversion,photothermal conversion and battery energy storage have manifested broad prospects and witnessed rapid development. As research progresses,the structure-activity relationships of interface formation mechanisms,electronic structures and charge transfer processes have emerged as hotspots in the design of new semiconductor devices and new material research,supporting the development of significant fields such as energy catalysis,interface functional construction and chip devices. Thus,accurately measuring the energy level structure of semiconductor thin film materials is of great significance. The X-ray photoelectron spectroscopy(XPS),ultraviolet photoelectron spectroscopy(UPS),and inverse photoelectron spectroscopy(IPES) commonly used for measuring the full energy level structure of semiconductor thin film materials were introduced. The research objects,theoretical basis and measurement principles,measurement methods and methods for identifying energy level structures of these three characterization methods were emphasized. Finally,data analysis and discussion were carried out through practical cases. The three characterization techniques are complementary and can offer more effective information from the energy perspective,which is of crucial significance for the fabrication of semiconductor thin film materials,impurity doping,as well as the optimization of functions and performances.更多还原