【摘要】 调整基片台的结构，在自制的微波等离子体化学气相沉积（MPCVD）设备上成功地批量生长了单晶金刚石，并沉积了直径为100 mm的多晶金刚石膜。通过对基片台上方的电场强度分布模拟研究发现，从衬底钼（Mo）或硅（Si）上表面到Mo片上表面之间的距离h对基片台上方的电场强度分布有重要影响，对决定金刚石生长质量的等离子体环境有重要作用；等离子体中甲烷（CH₄）与氢气（H₂）的体积比对单晶金刚石和多晶金刚石膜的生长质量有重要影响。研究表明：当h保持在0.8～1.0 mm、CH₄与H₂体积比为5%时的等离子体环境适合单晶金刚石的大面积生长；而h<0.2 mm、CH₄与H₂体积比为2%时的等离子体环境沉积的多晶金刚石膜具有较高的均匀性。利用两种不同结构的基片台在不同的CH₄与H₂体积比条件下成功地获得了数量较多、质量较好的单晶金刚石以及质量和形貌较均匀的大面积金刚石膜。更多还原

【Abstract】 By adjusting the structure of the substrate holder,single-crystal diamond was successfully grown in batches on a self-made microwave plasma chemical vapor deposition（MPCVD）device,and microcrystalline diamond films with a diameter of 100 mm were deposited. By simulating the distribution of electric field intensity above the substrate holder,we found that the distance h from the upper surface of molybdenum（Mo）or silicon（Si）to the upper surface of Mo has an important effect on the distribution of electric field intensity above the substrate,and plays an important role in the plasma environment that determines the growth quality of diamond. The volume ratio of methane（CH₄）to hydrogen（H₂）in the plasma significantly affects the growth quality of single-crystal diamond and microcrystalline diamond films. The experimental results show that when h is maintained at 0.8-1.0 mm and the volume ratio of CH₄ to H₂ is 5%,the plasma environment is suitable for large-area growth of single-crystal diamond. The uniformity of microcrystalline diamond films deposited in a plasma environment is higher when h< 0.2 mm and CH₄ to H₂ volume ratio is 2%. A large amount of single-crystal diamond with quality and a large-area diamond film with uniform quality and morphology were successfully obtained by using two substrate holders with different structures under different CH₄ to H₂ volume ratios.更多还原