【摘要】 据报道, Ni掺杂的Fe₅GeTe₂单晶居里温度（T_C）可达478 K,由于室温铁磁范德瓦尔斯（van der Waals, vdW）材料在自旋电子学应用中具有较大潜力,故为了探究Ni掺杂对Fe₅GeTe₂单晶室温磁电阻（magnetoresistance, MR）效应的影响,采用化学气相输运（chemical vapor transport, CVT）法生长了一系列(Fe_1-xNi_x)_5+δGeTe₂单晶样品,并采用综合物性测量系统（physical property measurement system, PPMS）和磁性能测量系统（magnetic property measurement system, MPMS）分别对其磁性以及室温MR随着Ni掺杂含量的变化进行了测量.研究结果表明,室温MR随着Ni掺杂含量的变化出现了从线性负磁电阻（negative magnetoresistance, NMR）转变为2种不同类型的非线性NMR、再转变为线性正磁电阻（positive magnetoresistance, PMR）的变化趋势.详细分析了不同MR行为的微观机制并阐述了其在自旋电子学器件的应用前景.更多还原

【Abstract】 According to reports, Ni-doped Fe₅GeTe₂ single crystals have a Curie temperature（T_C） of up to 478 K. Given the great potential of room-temperature van der Waals（vdW） ferromagnetic materials in spintronics, a series of(Fe_1-xNi_x)_5+δGeTe₂ single crystals were formed via the chemical vapor transport（CVT） method, so as to investigate the effect of Ni doping on the room-temperature magnetoresistance（MR） effect of Fe₅GeTe₂ single crystals. Moreover, their magnetic properties and room-temperature MR changes with Ni doping were measured using a physical property measurement system（PPMS）and a magnetic property measurement system（MPMS）. The results show that the roomtemperature MR evolves from linear negative magnetoresistance（NMR） to two nonlinear NMR types and then to linear positive magnetoresistance（PMR） with increasing Ni content. The microscopic mechanisms of different MR effects and their prospects in spintronic devices were analyzed.更多还原