【摘要】 首先采用烧结工艺制备了不同保温时间的Ni-W合金靶材,并以氧化铟锡（ITO）为基体,通过磁控溅射法制备了Ni-W合金薄膜。采用X射线衍射（XRD）、扫描电镜（SEM）、电子背散射衍射（EBSD）、透射电镜（TEM）、原子力显微镜（AFM）等对靶材及其溅射薄膜的微观组织进行表征,使用四探针测试仪和台阶仪对薄膜的方阻值和厚度进行了测试,研究了保温时间对Ni-W合金靶材性能及其溅射薄膜性能的影响。结果表明:保温3 h时的靶材的性能达到最佳,此时靶材的相对致密度为96.25%,晶粒大小为8μm,织构强度增加到4.92;不同保温时间的Ni-W合金靶材中只存在Ni₁₇W₃和W两种物相;采用保温3 h的靶材制备的溅射薄膜性能较好,此时的薄膜厚度达到最大,为330μm,薄膜的方阻最小,为31.4Ω/,薄膜表面最为光滑,均方根粗糙度为10.12 nm。更多还原

【Abstract】 Firstly, Ni-W alloy targets with different holding time were prepared using sintering technology, and Ni-W alloy thin films were prepared by magnetron sputtering using indium tin oxide（ITO） as the substrate. Microstructure of the alloy targets and its sputtered thin films was characterized using X-ray diffraction（XRD）, scanning electron microscopy（SEM）, electron backscattered diffraction（EBSD）technique, transmission electron microscopy（TEM） and atomic force microscopy（AFM）, the sheet resistance value and thickness of the thin films were tested using a four-point probe tester and a step profiler, and the effect of holding time on the properties of the Ni-W alloy targets and their sputtered thin films was studied. The results show that the performance of the alloy target is optimum when the holding time is 3 h, with the relative density of 96. 25%, the grain size of 8 μm, and the texture strength increases to 4. 92. Only Ni₁₇W₃ and W phases exist in the Ni-W alloy targets with different holding time. The sputtered thin film prepared using the alloy target with a holding time of 3 h has good performance, the thickness reaches its maximum, which is 330 μm, the sheet resistance is the smallest, which is 31. 4 Ω/□, and the surface of the thin film is the smoothest, with a root mean square roughness of 10. 12 nm.更多还原