【摘要】 高功率半导体激光器是现代高能激光技术的核心,作为固体、光纤及碱金属等激光系统的泵浦源及直接半导体激光,广泛应用于工业加工、国防等领域。综述了近十年来GaAs基高功率边发射半导体激光器的关键技术进展。首先,回顾半导体激光器制备技术的发展,并系统分析提升效率和输出功率所面临的挑战及其解决方案,讨论宽条与锥形半导体激光器的模式调控技术。随后,探讨内置光栅波长锁定能力及其功率效率损失的机理,并对不同应用场景下的光纤耦合技术进行综合对比,阐明它们在实际应用中的挑战与局限。本文为下一代高功率半导体激光器的研发提供了理论参考与技术指引。更多还原

【Abstract】 Significance GaAs-based high-power edge-emitting semiconductor lasers are the indispensable pump source fiber,solid-state and alkali-vapor laser systems.Over the last two decades,fiber-laser—and high-power laser systems more broadly—have vaulted from the hundred-watt and kilowatt regimes into the tens-of-kilowatts domain owing to steady gains in semiconductor pumping source output power and breakthroughs in the fabrication of supporting components.Currently,the quest for hundreds-of-kilowatt optical powers in high-energy-laser systems and for greater cost effectiveness,reliability,and efficiency in industry pushes these diodes to their limits in terms of power,wall-plug efficiency,brightness,and spectral control.The HighEnergy Laser Scaling Initiative（HELSI） targets 500 kW laser modules and aims to achieve the megawatt class in 2025-2030 while significantly reducing the system volume.Satisfying these demands pump diodes that（ⅰ） surpass 70% wallplug efficiency;（ⅱ） remain stable at heatsink temperatures above 50℃ to ease thermal management;（ⅲ） maintain precise spectral overlap with the gain fiber’ s absorption spectrum across a>50℃ range;（iv） lock their wavelength within milliseconds for “instanton” operation;and（ⅴ） deliver higher brightness to increase coupling efficiency and suppress stimulated Raman scattering.Meanwhile,emerging manufacturing scenarios accelerate diodelaser innovation.Precision processing such as batterytab welding require the laser source delivery of high power and near diffraction limited beam quality,in addition to narrow line widths to curb transversemode instability.The abundance of handheld welding tools propels broadarea chips toward higher power levels,thus enabling simpler and more economical system layouts.Current fiberlaser cutters exceed 100 kW,thus imposing stringent demands on diode power density and brightness to mitigate nonlinear effects.Finally,pumping requirements for alkalimetal vapor and ultrafast solid state lasers demand narrowband,highpower emission at specific wavelengths,and suppressing thermally induced wavelength drifts under high power loading.Progress To satisfy increasingly stringent,multidimensional performance demands,breakthroughs in GaAs-based high-power edge-emitting semiconductor lasers have been realized over the past five to ten years.The industrialization of epitaxy and fabrication,in addition to asymmetric-waveguide design,multijunction cascading,and thermally optimized packaging,has pushed continuouswave outputs of 9xx-nm broad-area single-junction emitters beyond 45 W,while broad-area multijunction chips have achieved continuous-wave power breakthrough at hundred-watt level.Mode-selective architectures curb slow-axis divergence,thus enabling1 kW of near-diffraction-limited power from 200 μm fibers.On the spectral front,on-chip grating wavelength locking chips has achieved comparable performance to Fabry-Pérot devices in terms of wall-plug efficiency yet offer far superior integrability compared with external volume-Bragg-grating schemes.Continued progress will hinge on scaling outputs against thermal or nonlinear roll-overs,enhancing beam quality while preserving power and efficiency,and expanding on-chip wavelength-locking range without deteriorating electro-optical performance.Satisfying these intertwined goals relies on systematic innovation in semiconductor chip fabrication technologies,chip architecture design,and fiber-coupling techniques.Conclusions and Prospects GaAs-based high-power edge-emitting semiconductor lasers have advanced considerably in the past decade.Currently,fully industrial 6-inch epitaxial and wafer-level production lines underpin devices whose performance comfortably satisfies,and often exceeds,the demands of modern laser systems.Continuous-wave outputs from 9-xx nm broad-area single-junction emitters surpasses 45 W,while double-junction chips exceed 130 W.The peak electro-optical efficiency in the 7-xx nm has achieved breakthrough peak efficiency exceeding 70%.Meanwhile,the lateral brightness has reached 4.0 W·mm^-1·mrad^-1 at 45 W,and tapered chips deliver near-diffraction-limited beams（M²<1.2 at 10 W）.On-chip grating lockers provide robust spectral control,and single-emitter based modules have transcended the 1 kW barrier through 200 μm fibers.Meanwhile,spectral beam-combining architectures has achieved>53% efficiency at these power levels.From the perspective of current technology trends,GaAs-based semiconductor lasers are advancing toward higher efficiency,superior beam quality,greater environmental robustness,and largerscale manufacturability.更多还原