【摘要】 本文对碲镉汞钝化层、碲镉汞/钝化层界面进行深入研究。采用SEM、EDX对CdTe/ZnS钝化层的表面形貌、元素组分进行表征分析。通过制作MIS器件、光电二极管器件研究钝化层与HgCdTe界面的电学特性，利用低温探针台C-V测试系统、I-V测试系统以及焦平面测试系统，验证优化后的钝化工艺对HgCdTe探测器电学性能的影响。结果表明，通过调整表面钝化工艺，固定电荷密度从2.79×10¹¹/cm²降低至5.19×10¹⁰/cm²,界面态密度从1.59×10¹¹/cm²降低至7.65×10¹⁰/cm²,器件的暗电流从7.8×10^-9A降低至2.43×10^-10A,光电二极管器件的表面漏电现象获得了有效抑制，探测器稳定性能得到明显提升。更多还原

【Abstract】 In this paper, the CdTe/ZnS passivation layer and the CdTe/passivation layer interface are studied in depth.The surface morphology and elemental components of the CdTe/ZnS passivation layer are characterized by scanning electron microscopy（SEM）and energy-dispersive X-ray spectroscopy（EDX）.The electrical properties of the passivation layer/HgCdTe interface are investigated by fabricating metal-insulator-semiconductor（MIS）devices and photodiode devices, and the effects of the optimized passivation process on the electrical performance of HgCdTe detectors are verified by using the low-temperature probe bench C-V test system, I-V test system and focal plane test system.The results show that by adjusting the surface passivation process, the fixed charge density is reduced from 2.79×10¹¹/cm² to 5.19×10¹⁰/cm²,the interfacial density of states is reduced from 1.59×10¹¹/cm² to 7.65×10¹⁰/cm²,the dark current of the device is reduced from 7.8×10^-9A to 2.43×10^-10A,and the surface leakage of the photodiode device is effectively suppressed.The surface leakage of the photodiode device is effectively suppressed, and the stability of the detector is significantly improved.更多还原