【摘要】 铟柱倒装互连是红外焦平面探测器(IRFPA)芯片间电连接的核心工艺，其可靠性直接影响探测器的性能与寿命。本文针对当前铟柱倒装互连工艺中焊点数量大、密度高、芯片尺寸大等难点，系统研究了铟柱高度均匀性、芯片面型、导通率及开关机循环冲击对互连可靠性的影响机制，建立了基于工艺前指标控制到工艺后可靠性验证的全流程标准化评价方法。通过典型样品的试验验证，揭示了各指标与互连失效的内在关联，为红外焦平面探测器研制提供了关键工艺控制依据。更多还原

【Abstract】 Indium bump flip-chip bonding constitutes the core interconnection process for electrical connections between chips in infrared focal plane arrays(IRFPAs),whose reliability directly determines detector performance and operational lifetime. In response to current process challenges including high-density solder joints, large-scale chip dimensions, and massive interconnection counts, systematic studies are conducted on the impact mechanisms of indium bump height uniformity, chip topography, conductivity rates, and power cycling shocks on interconnection reliability.A standardized full-process evaluation methodology is established, spanning from pre-process parameter control to post-process reliability verification. Empirical verification with representative samples unveils intrinsic correlations between critical metrics and interconnection failure modes, providing essential process control guidelines for IRFPA manufacturing.更多还原