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热注入法制备CuInSe2量子点及光电化学性能研究
Preparation and photoelectrochemical properties of CuInSe2 quantum dots prepared with thermal injection method
【摘要】 采用热注入法在相同温度、不同反应时间条件下制备了尺寸均一的CuInSe2绿色量子点,利用电泳过程沉积到FTO(氟掺杂的二氧化锡)玻璃基底上的TiO2介孔层中,随后与利用连续离子层沉积法制备的钝化层共同组成ZnS/CuInSe2/TiO2复合光阳极。XRD和TEM分析结果表明,成功合成尺寸约8nm的CuInSe2量子点。对光阳极的光电化学性能进行分析,结果表明,当反应时间为10min、ZnS的沉积层数为4时,光阳极的电流密度最大,为5.27mA·cm-2,外加偏压光-电转化效率(ABPE)为0.78%,电池的性能最佳。
【Abstract】 Green CuInSe2quantum dots with uniform size were prepared by thermal injection method at the same temperature with different reaction time.Through the conjunction of electrophoretically deposited CuInSe2quantum dots in TiO2mesoporous layer on a FTO substrate with a passivation ZnS layer prepared by SILAR method,ZnS/CuInSe2/TiO2composite photoanode was formed.The results of XRD and TEM proved the successful synthesis of CuInSe2quantum dots with an average size of approximately 8nm.Based on the analysis of photoelectrochemical performance of photoanodes PEC revealed that the current density of the photoanode reached a maximum of 5.27mA·cm-2with a reaction time of 10 min and ZnS layer number of 4,while the applied bias photoelectrical conversion efficiency (ABPE)was 0.78%,representing the optimal performance within all cell samples.
【Key words】 CuInSe2 quantum dots; thermal injection method; photoelectrochemical property; passivation layer;
- 【文献出处】 化学工程师 ,Chemical Engineer , 编辑部邮箱 ,2025年01期
- 【分类号】TB383.1
- 【下载频次】19