【摘要】 碳化硅（SiC）因其优异的物理化学特性被广泛应用于高端光学元件制造，但其高硬脆性和化学惰性导致加工过程存在效率低、易损伤等问题。本研究提出一种基于磁流变弹性体工具的化学机械抛光方法，通过有效融合材料表层氧化反应与机械去除行为实现SiC的高效抛光。本研究结合单颗磨粒去除行为分析模型与芬顿催化反应原理，设计四因素三水平正交实验，探究抛光工具Fe₃O₄磁性颗粒质量分数、抛光液H₂O₂浓度、抛光速度及外部磁场强度等对SiC材料去除率和表面粗糙度的影响规律。通过理论分析与实验研究发现，抛光速度对材料去除率的影响最为显著（48.35%），而抛光液H₂O₂浓度对表面粗糙度的影响占主导作用（51.15%），在Fe₃O₄质量分数6 wt%、H₂O₂浓度9 wt%、抛光速度40 r/s及磁场强度300 mT的优化工艺参数实验条件下，SiC试件表面粗糙度由初始的1.688μm降至0.267μm，材料去除率可达3.842μg/h，揭示了氧化层生成速率与机械去除效率协同作用对磁流变弹性体工具抛光过程的影响规律，为复杂曲面SiC光学元件的可控柔性抛光提供了理论依据与工艺参考。更多还原

【Abstract】 Objective Silicon carbide（SiC） is a pivotal material for high-precision optical systems due to its exceptional hardness and thermal stability, yet its inherent brittleness and chemical inertness pose significant challenges in achieving ultra-smooth surfaces（Ra<0.5 nm） with high material removal efficiency. Traditional polishing methods, such as rigid tool-based grinding and magnetorheological fluid polishing（MRF）, often face trade-offs between surface integrity and processing speed. This study addresses these limitations by proposing a novel chemical-mechanical polishing（CMP） strategy using a magnetorheological elastomer（MRE） tool, which integrates magnetic field-controlled stiffness modulation with Fenton catalytic oxidation to synergistically e nhance material removal while minimizing subsurface damage.Methods The MRE tool was fabricated by embedding Fe₃O₄ particles（5 μm） and diamond abrasives（5 μm）into a silicone rubber matrix under a pre-structured magnetic field（100 mT） to align magnetic particles into chainlike microstructures. A four-factor, three-level Taguchi orthogonal experiment（L9（3⁴）） was designed to investigate the effects of Fe₃O₄ mass fraction（4 wt%-8 wt%）, H₂O₂ concentration（3 wt%-9 wt%）, polishing speed（30-50 r/s）, and external magnetic field intensity（100-300 mT） on material removal rate（MRR） and surface roughness（Ra）. Surface quality was characterized using confocal microscopy（Olympus LEXT OLS5000）, while MRR was calculated via mass loss measurements（Sartorius CPA225D, ±0.01 mg）. Mechanistic insights were derived from single-grain mechanical removal models and Fenton reaction kinetics, supported by finite element s imulations（COMSOL Multiphysics） to analyze stress distribution under varying magnetic fields.Results and Discussions The optimized parameter combination（Fe₃O₄: 6 wt%, H₂O₂: 9 wt%, speed: 40 r/s,magnetic field: 300 mT） achieved a remarkable surface roughness reduction from Ra=1.688 μm to 0.267 μm（84.2% improvement） with an MRR of 3.842 μg/h. Polishing speed dominated MRR（48.35% contribution via ANOVA）, while H₂O₂ concentration significantly influenced Ra（51.15%）. Fe₃O₄ acted as a catalytic agent in the Fenton reaction, generating hydroxyl radicals（·OH） to oxidize SiC into a soft SiO₂ layer（50-80 nm thickness）,which was efficiently removed by magnetically tuned abrasives. Excessive Fe₃O₄（>8 wt%） induced particle agglomeration, reducing catalytic efficiency, while high polishing speeds（>40 r/s） caused centrifugal fluid dispersion, degrading surface quality. Magnetic field intensity critically modulated tool stiffness, with 300 mT e nhancing abrasive embedment depth by 28% compared to 100 mT, though over-stiffness led to surface scratches.Conclusions This study successfully demonstrates a magneto-chemical-mechanical synergy for SiC polishing,achieving submicron surface quality and high removal efficiency. The MRE tool’s dynamic stiffness adaptation enables precision control over abrasive-workpiece interactions, while Fenton catalysis minimizes mechanical damage by softening the SiC surface. The optimized process outperforms conventional MRF（Ra ～0.5 μm,MRR ～1.2 μg/h） and is validated on Φ200 mm SiC substrates, showcasing scalability for aerospace optics and semiconductor applications. These findings advance the understanding of hard-brittle material processing,offering a paradigm for next-generation optical manufacturing technologies that balance efficiency, precision, and surface integrity.更多还原