【摘要】 光电导天线是太赫兹频段非常重要的器件，在太赫兹时域光谱技术中应用广泛。本文采用分子束外延生长方法制备Be掺杂InGaAs/InAlAs超晶格材料，作为1 550 nm激光泵浦光电导太赫兹探测天线的光吸收材料，制备的材料方块电阻大于10~6Ω/sq、电子迁移率为216 cm~2/（V·s）。采用湿法腐蚀和磁控溅射工艺分别制备探测天线有源区台面和电极结构，并将天线芯片封装在PCB电路板上。采用国产1 550 nm飞秒泵浦激光器搭建探测天线测试系统，对电极间隙分别为40μm和60μm的探测天线进行了表征。测量结果表明，60μm天线具有更宽的谱宽和功率动态范围，分别达到4.0 THz和77.0 dB。更多还原

【Abstract】 The photoconductive antenna is a very important device in the terahertz region and is widely used in terahertz time-domain spectroscopy technology. This article uses the molecular beam epitaxy method to grow Be-doped InGaAs/InAlAs superlattice as light absorbing materials for 1 550 nm laser pumped photoconductive antenna for terahertz detection. The prepared materials have a sheet resistance greater than 10~6 Ω/sq and an electron mobility of 216 cm~2/（V·s）. The active mesa and electrode structure of the detection antenna are prepared using wet etching and magnetron sputtering processes, and the antenna chip is packaged on a PCB board. A detection antenna measurement system is built by employing a domestically produced 1 550 nm femtosecond pump laser, and the detection antennas with electrode gaps of 40 μm and 60 μm are characterized. The measurement results indicate that the 60 μm antenna has a wider spectral width and power dynamic range, reaching 4.0 THz and 77.0 dB, respectively.更多还原