【摘要】 本文以纳米级SnO₂为前驱体，采用溶胶–凝胶法结合高温热处理的方式制备具有不同含量In元素掺杂的In-Sn/rGO复合材料。研究了In元素含量对复合材料微观组织结构、物相组成、缺陷程度、介电常数、导电性和介电性能的影响。结果表明，引入In元素未对Sn/rGO复合材料的微观组织形貌和物相组成产生较大影响，仅稍降低了复合材料的缺陷程度；随着In元素掺杂含量的增加，复合材料的介电常数和导电性呈现先升高后降低的趋势；In-Sn/rGO复合材料的介电性能在In掺杂质量分数为1.0%时达到最佳，反射损耗值为–51.16 dB，相应的吸收频率为8.72GHz，且有效吸收带宽为3.60 GHz。更多还原

【Abstract】 In-Sn/rGO composites with different In doping contents were prepared by sol–gel method combined with high temperature heat treatment using nano-SnO₂ as precursor. The effects of In content on the micro-structure, phase composition, defect degree, dielectric constant, electrical conductivity and dielectric properties of the composites were investigated. The results show that the introduction of In has no significant effect on the micro-structure and the phase composition, only slightly reducing the degree of defects in the composite material. With the increase of In content, the dielectric constant and electrical conductivity of the composite increase first and then decrease. The dielectric properties of In-Sn/rGO composite are best when the In doping mass fraction is 1.0%, the reflection loss value is –51.16 dB, the corresponding absorption frequency is 8.72 GHz, and the effective absorption bandwidth is 3.60 GHz.更多还原