【摘要】 二硫化钼（MoS₂）因其独特的物理和化学特性，在催化、能源以及光电子器件等领域展现出可观的实用价值。而制备大面积、高质量、连续且均匀的单层MoS₂薄膜则是实现其应用的关键。系统探究了利用化学气相沉积（CVD）法生长单层MoS₂薄膜的生长动力学过程，制备出了高质量单层MoS₂薄膜，并利用载气流量调控策略，成功的实现了在SiO₂/Si衬底上厘米级连续单层MoS₂薄膜的制备，其长度可达近10cm。之后利用原子力显微镜、拉曼光谱、荧光光谱等对其进行了基础物性表征，证明了制备的单层MoS₂具有极高的质量。更多还原

【Abstract】 Molybdenum disulfide（MoS₂）,renowned for its unique physical and chemical properties, demonstrates significant practical value in catalysis, energy applications, and optoelectronic devices.The fabrication of large-area, high-quality, continuous, and uniform monolayer MoS₂ films is crucial for enabling these applications.This study systematically investigated the growth kinetics of monolayer MoS₂ films via chemical vapor deposition（CVD）,successfully synthesizing high-quality monolayer MoS₂.By employing a carrier gas flow rate modulation strategy, we achieved the preparation of centimeter-scale continuous monolayer MoS₂ films on SiO₂/Si substrates, with lengths up to approximately 10cm.Comprehensive characterization using atomic force microscopy（AFM）,Raman spectroscopy, and photoluminescence（PL） spectroscopy confirmed that the as-prepared monolayer MoS₂ exhibited exceptional quality.更多还原