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温度对晶闸管大气中子辐照效应的影响研究

Influence of Temperature on the Atmospheric Neutron Irradiation Effect of Thyristors

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【作者】 李强; 殷子强; 师凯; 蒋泽赟; 赵明敏; 丁卫东; 陈忠;

【Author】 LI Qiang;YIN Ziqiang;SHI Kai;JIANG Zebin;ZHAO Mingmin;DING Weidong;CHEN Zhong;School of Electrical Engineering, Xi’an Jiaotong University;China Electrical Power Research Institute;Electric Power Research Institute, State Grid Anhui E1ectric Power Co., Ltd.;

【通讯作者】 丁卫东;

【机构】 西安交通大学电气工程学院; 中国电力科学研究院有限公司; 国网安徽省电力有限公司电力科学研究院;

【摘要】 大气中子辐照对地表尤其是高海拔地区电子信息系统和电力电子系统半导体器件的安全运行存在威胁。在“藏电外送”的背景下,随着特高压直流输电工程的不断建设,换流阀用晶闸管大气中子辐照效应研究得到了越来越多的重视。文中参考国际半导体辐照效应无损实验方法,在研究直流输电用晶闸管辐照失效率随电压变化规律的基础上引入温度变量,定量分析了晶闸管在不同温度下的失效率变化并对其失效率模型中的温度修正函数进行拟合。实验发现,在晶闸管的正常工作允许温度范围内,其受中子辐照发生单粒子烧毁的失效率随温度升高而降低。通过计算机辅助设计技术(technology computer aided design,TCAD)半导体软件仿真获得了粒子入射器件导致的故障电流变化,仿真结果与实验规律相符。文中的实验结果可以对直流输电工程设计与辐照故障率评估工作提供支撑和指导。

【Abstract】 Atmospheric neutron radiation poses a threat to semiconductor devices in electronic information systems and power electronics systems,especially in high-altitude areas. In the context of‘power transmission from Xizang to outside’,with the continuous construction of ultra-high voltage direct current transmission projects,the study of atmospheric neutron irradiation effects on thyristors used in converter valves has received increasing attention. This article refers to the international non-destructive experimental method for semiconductor irradiation effects. Based on the study of the variation law of irradiation failure rate of thyristors used in DC transmission with voltage,temperature variables are introduced to quantitatively analyze the change of failure rate of thyristors at different temperatures,and the temperature correction function in their failure rate model is fitted. The experiment found that within the normal operating temperature range of thyristors,the failure rate of single particle burnout caused by neutron irradiation decreases with increasing temperature.The variation of fault current caused by particle incident on the device was obtained through semiconductor software simulation using technology computer aided design(TCAD)technology. The simulation results were consistent with experimental laws. The experimental results of this article can provide supportandguidanceforthedesignofdirectcurrenttransmissionprojectsandtheassessmentofradiationfailurerates.

【基金】 国家电网公司科技项目(5500-202320184A-1-1-ZN)~~
  • 【文献出处】 高压电器 ,High Voltage Apparatus , 编辑部邮箱 ,2025年09期
  • 【分类号】TN34
  • 【下载频次】31
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