CMOS-compatible UV–NIR high-responsivity photodetector based on flat femtosecond-laser sulfur-hyperdoped silicon

【摘要】 Silicon-based photodetectors are experiencing significant demand for realizing infrared photodetection, night vision imaging, and ultraviolet-enhanced monitoring and communication. Recently, femtosecond-laser（fs-laser） hyperdoped silicon photodetectors have gained attention as promising alternatives to conventional silicon-based devices, owing to their exceptional properties, including high detectivity at low operating bias, broadband response spectrum beyond the bandgap limitation, wide operational temperature range, and ultrahigh dynamic range. Despite these advantages, the practical application of fs-laser hyperdoped devices has been hindered by challenges such as uneven surface structures and numerous lattice defects, which impede industrialization, chip integration, and ultraviolet photodetection performance. In this study, we present, to our knowledge, a novel design of flat fs-laser hyperdoped silicon materials and photodetectors tailored for complementary metal-oxide-semiconductor（CMOS） compatibility. A key innovation lies in the reduction of surface structure dimensions by three orders of magnitude, enabling the integration of fs-laser hyperdoped silicon as a photodetection layer in back-illuminated CMOS devices. The proposed photodetector achieves a peak responsivity of120.07 A/W and a specific detectivity of 1.27 × 10¹⁴Jones at 840 nm, marking the highest performance reported for fs-laser hyperdoped silicon photodetectors. Furthermore, it demonstrates ultraviolet enhancement and sub-bandgap infrared photodetection simultaneously, with responsivities exceeding 10 A/W across a broad spectrum from 350 to 1170 nm at 5 V. This breakthrough not only paves the way for fs-laser hyperdoped silicon in array photodetection but also facilitates its integration with silicon-based chip fabrication processes, addressing critical bottlenecks for industrialization and advancing the field of silicon photonics.更多还原

【Abstract】 Silicon-based photodetectors are experiencing significant demand for realizing infrared photodetection, night vision imaging, and ultraviolet-enhanced monitoring and communication. Recently, femtosecond-laser（fs-laser） hyperdoped silicon photodetectors have gained attention as promising alternatives to conventional silicon-based devices, owing to their exceptional properties, including high detectivity at low operating bias, broadband response spectrum beyond the bandgap limitation, wide operational temperature range, and ultrahigh dynamic range. Despite these advantages, the practical application of fs-laser hyperdoped devices has been hindered by challenges such as uneven surface structures and numerous lattice defects, which impede industrialization, chip integration, and ultraviolet photodetection performance. In this study, we present, to our knowledge, a novel design of flat fs-laser hyperdoped silicon materials and photodetectors tailored for complementary metal-oxide-semiconductor（CMOS） compatibility. A key innovation lies in the reduction of surface structure dimensions by three orders of magnitude, enabling the integration of fs-laser hyperdoped silicon as a photodetection layer in back-illuminated CMOS devices. The proposed photodetector achieves a peak responsivity of120.07 A/W and a specific detectivity of 1.27 × 10¹⁴Jones at 840 nm, marking the highest performance reported for fs-laser hyperdoped silicon photodetectors. Furthermore, it demonstrates ultraviolet enhancement and sub-bandgap infrared photodetection simultaneously, with responsivities exceeding 10 A/W across a broad spectrum from 350 to 1170 nm at 5 V. This breakthrough not only paves the way for fs-laser hyperdoped silicon in array photodetection but also facilitates its integration with silicon-based chip fabrication processes, addressing critical bottlenecks for industrialization and advancing the field of silicon photonics.更多还原