【摘要】 为满足光通信系统对高性能光电探测器日益增长的需求，设计并制备了一种基于异质集成技术的大带宽、高响应度光电探测器。传统正入射型光电探测器普遍面临带宽和响应度相互制约以及散热能力不足的问题。为解决上述问题，本研究提出一种基于异质集成技术的新型探测器结构，通过晶圆键合工艺将高速InGaAs近红外探测器集成于具有高导热率的碳化硅（SiC）衬底上。测试结果表明，所制备的光电探测器在1 550 nm波段可实现高达86 GHz的3 dB带宽及0.6 A/W的响应度，其量子效率-带宽积明显优于基于原生磷化铟（InP）衬底制备的面入射型器件。此外SiC衬底优异的散热性能，使得所制备器件的饱和特性得以大幅提升。本研究证实，将光电探测器与高导热衬底进行异质集成，是突破传统器件性能瓶颈的有效策略，可为下一代高速、高灵敏度光接收模块的发展提供重要技术参考。更多还原

【Abstract】 To address the growing demand for high-performance photodetectors in optical communication systems, the design and fabrication of a high-bandwidth, high-responsivity photodetector utilizing heterogeneous integration technology was presented in this paper. Conventional normal-incidence photodetectors often suffer from the inherent trade-off between bandwidth and responsivity, coupled with inadequate thermal dissipation. To overcome these limitations, this study introduced a novel architecture based on heterogeneous integration technology. It featured a detector integrated onto a silicon carbide(SiC) substrate with high thermal conductivity via wafer bonding. Measurement results demonstrate that the fabricated photodetector achieves a 3 dB bandwidth of up to 86 GHz and a responsivity of 0.6 A/W at 1 550 nm wavelength. The quantum efficiency-bandwidth product is significantly superior to that of conventional normal-incidence devices fabricated on native indium phosphide(InP) substrates. Furthermore, the excellent thermal properties of the SiC substrate substantially improve the saturation characteristics of the device. This work confirms that heterogeneous integration of photodetectors with high-thermal-conductivity substrates is an effective strategy to overcome the performance bottlenecks of conventional devices, offering an important technical reference for next-generation high-speed and high-sensitivity optical receivers.更多还原