【摘要】 利用硅基晶圆级3D异构集成工艺研制了一种2～18 GHz 4×4宽带小型化开关交换矩阵，解决了当前开关矩阵尺寸大、批次一致性较差、难以批量制作的问题。该器件由7层高阻硅晶圆堆叠形成，内部集成了4个硅基MEMS超宽带功分器、4个SP4T开关、16个SPST开关、24个电容及4个译码驱动等芯片，采用TSV（硅通孔）垂直互连，通过晶圆级低温键合工艺，实现了开关矩阵16个通道射频信号的灵活交换传输。经测试，该开关矩阵的插入损耗小于15 dB（含6 dB功率分配损耗），回波损耗大于8.8 dB，隔离度大于68 dB，与仿真结果基本吻合。该器件重量仅2.1 g，尺寸仅22.2 mm×21.7 mm×1.9 mm，比同规模LTCC开关矩阵尺寸缩减75%，比同轴开关矩阵尺寸缩减好几个数量级。更多还原

【Abstract】 A compact wideband 2-18 GHz 4×4 switch matrix was demonstrated in 3D silicon heterogeneous wafer-level integration process. Compared with conventional switch matrix, the presented design addressed the problems of bulky size, lower consistency and mass production difficulties. The proposed switch matrix was stacked by 7-layers high-resistivity silicon(HRS) substrates, and consisted of 4 microelectromechanical systems(MEMS) ultra wideband power dividers, 4 single-pole four-throw(SP4T) switches, 16 single-pole single-throw(SPST) switches, 24 capacitors and 4 FET drivers. The signal was vertically transmitted by through-silicon via(TSV). Moreover, an in-house silicon heterogeneous wafer-level integration process was developed to achieve flexible RF signal exchange for 16 channels in the proposed switch matrix. Measurement results show that the fabricated prototype achieves insertion losses within 15 dB, including two switch losses of 6 dB, return losses greater than 8.8 dB and isolation higher than 68 dB. These results agree well with simulation. Additionally, the fabricated prototype is only 22.2 mm×21.7 mm×1.9 mm with weight of 2.1 g, corresponding to a reduction of 75% in volume compared to other previous low-temperature co-fired ceramics(LTCC) 4×4 versions, orders-of-magnitude better than coaxial switch matrices.更多还原