【摘要】 半导体光催化是一种利用太阳能激发催化剂产生具有氧化还原能力的光生载流子的技术，已在多个领域得到广泛应用。石墨型氮化碳（g-C₃N₄）作为一种无污染的半导体在光催化领域受到研究关注，然而光生载流子复合率高和可见光利用率低限制其光催化性能。构建g-C₃N₄基S型异质结是解决本体载流子易复合的有效方法，促进载流子在空间上的有效分离，抑制载流子复合，进而提高光催化性能。首先介绍S型异质结的机理，继而重点介绍g-C₃N₄基S型异质结制备方法的特点和其在不同领域的应用，最后，提出g-C₃N₄基S型异质结在光催化领域的发展前景和面临的挑战。更多还原

【Abstract】 Semiconductor photocatalysis is a technology that utilizes solar energy to excite catalysts, generating photogenerated carriers with redox capabilities. It has been widely applied across various fields. Graphitic carbon nitride（g-C₃N₄）, as a non-polluting semiconductor, has garnered attention in the field of photocatalysis. However, its further development is limited by a high rate of photogenerated carrier recombination and low utilization of visible light. Constructing g-C₃N₄-based S-scheme heterojunctions is an effective strategy to address the issue of intrinsic charge carrier recombination, enabling effective spatial separation of charge carriers, reducing recombination rates, and enhancing photocatalytic performance. This article first introduces the mechanism of S-scheme heterojunctions, then focuses on the characteristics of preparation methods for g-C₃N₄-based S-scheme heterojunctions and their applications in different areas. Finally, it proposes the prospects and challenges faced by g-C₃N₄-based S-scheme heterojunctions in the field of photocatalysis.更多还原