【摘要】 使用标准绿光GaN-LED外延片，制备了边长为10μm的六边m面侧壁Micro-LED芯片阵列。感应耦合等离子体刻蚀芯片台面后，使用TMAH+KOH溶液修复干法刻蚀引起的侧壁损伤，同时形成自对准的标准m面侧壁。作为对比，制备了侧壁沿a面的芯片，研究了侧壁晶面取向对Micro-LED性能的影响。结果表明m面侧壁芯片具备更光滑的侧壁，漏电流明显小于a面侧壁芯片。当注入电流密度为600 A/cm~2时，m面侧壁芯片比a面侧壁芯片外量子效率提升15%，对比侧壁未处理芯片提升82%。这些结果证明侧壁晶面的选择和损伤修复对Micro-LED发光性能提升具有显著影响，设计制备符合GaN六方晶格特征的m面侧壁，可大幅提高发光芯片效率，这为Micro-LED芯片的进一步发展提供了设计新思路。更多还原

【Abstract】 The fabrication of an array of micro-LED chips was presented with a side length of 10 μm and hexagonal m-face side walls based on a standard green GaN-LED epitaxial wafer. After Inductively Coupled Plasma(ICP) etching the chip surface, TMAH+KOH solution was used to repair side wall damage caused by the ICP etching, simultaneously creating self-aligned standard m-face side walls. For comparison, chips with side walls along the a-face were also fabricated to investigate the impact of side wall crystallographic orientation on micro-LED performance. Testing results indicated that m-face side wall chips exhibited smoother side walls, and their leakage current was significantly lower than that of a-face side wall chips. When the injection current density was 600 A/cm2, m-face side wall chips showed a 15% increase in external quantum efficiency compared to a-face side wall chips, and 82% higher than that of unprocessed chips. The choice of side wall had a significant effect on the optical properties of micro-LEDs. Designing and fabricating hexagonal m-face side wall structures that align with GaN lattice characteristics could greatly enhance the light-emitting efficiency, providing a new technical pathway for the further development of high-performance micro-LED technology.更多还原