【摘要】 分别采用反射热成像温度场测试技术和全带跨尺度仿真针对GaN晶体管非傅里叶热输运进行研究。在GaN外延结构上设计和加工了不同尺寸的加热电极，借助反射热成像方法的高空间分辨率优势，观察到了低至500 nm尺寸热源的温度场分布，更加直接地测定了样品热点温度。基于全带声子蒙特卡洛及有限元方法的三维跨尺度仿真的模拟结果与实验值具有较好一致性，均表明声子弹道效应导致热点温度显著增加。随着热源尺寸的减小，基于傅里叶定律的预测偏差逐渐增大，表明了高分辨率温度场实验和全带跨尺度热仿真相结合对准确预测器件结温的重要性。更多还原

【Abstract】 Research on non-Fourier heat transport in GaN transistors was conducted using both thermoreflectance thermal imaging and full-band multiscale simulations. Different-sized Au heaters are designed and fabricated on GaN epitaxial structures. Leveraging the high spatial resolution advantage of thermoreflectance thermal imaging, temperature field distributions of heat sources as small as 500 nm thermal observed, enabling more direct measurement of sample hot spot temperatures. Simulation results from three-dimensional multiscale simulations based on full-band phonon Monte Carlo and finite element methods are in good agreement with experimental values, indicating that phonon ballistic effects significantly increase hot spot temperatures. As the size of the heat source decreases, deviations from predictions based on Fourier’s law increase, highlighting the importance of combining high-resolution temperature field experiments with full-band multiscale thermal simulations to accurately predict device junction temperatures.更多还原