【摘要】 宽带隙半导体在研制无滤光片紧凑型日盲紫外探测器方面具有极大的发展潜力。本文结合本团队在分子束外延Mg Zn O单晶薄膜和磁控溅射非晶Ga₂O₃薄膜以及相应日盲紫外探测器的研究经验，综述了以Mg Zn O和非晶Ga₂O₃为代表的宽带隙氧化物半导体深紫外探测器研究进展，发现非晶Ga₂O₃薄膜拥有不输于单晶薄膜的深紫外响应特性。众多研究结果表明，氧空位相关缺陷对器件性能起着至关重要的作用，对其进行合理调控可有效提升器件性能。此外，与氧空位缺陷相伴的持续光电导效应为开发深紫外光电突触器件提供了新的研究视角。最后，针对上述研究中存在的问题进行剖析总结，期望进一步推动宽带隙氧化物半导体材料，尤其非晶Ga₂O₃材料在未来深紫外探测方面的产业应用。更多还原

【Abstract】 Wide bandgap semiconductors have great potential for the development of compact solar-blind ultraviolet detectors without filters.This article summarizes the research progress of deep ultraviolet photodetectors using wide bandgap oxide semiconductors including Mg Zn O and amorphous Ga₂O₃ （a-Ga₂O₃） thin films.It has been found that the photoresponse performance of a-Ga₂O₃ thin film is comparable or even better than that of crystalline thin films.Numerous results demonstrate that oxygen vacancy （V_O） defects play a crucial role in device performance.Based on the effective modulation of V_O defects,high performance solar-blind ultraviolet photodetectors can be successfully achieved.In addition,the persistent photoconductivity effect,which is usually accompanied by the presence of V_O defects in oxide materials,provides a new perspective for the development of optoelectronic synaptic devices in deep ultraviolet range.Finally,a brief discussion is provided concerning the above research progress as well as some unsolved issues.These advancements are expected to promote the industrial application of wide bandgap oxide semiconductor materials,especially a-Ga₂O₃,in deep ultraviolet detection in the future.更多还原