【摘要】 围绕TSV三维集成微系统的射频信号传输特性要求，针对TSV制造中的高深径比盲孔结构，研究对比了高功率脉冲磁控溅射与传统直流溅射工艺的效果。试验结果表明，通过提升等离子体离子化效率，高功率脉冲磁控溅射金属种子层的台阶覆盖率显著提高，尤其在深径比为10:1的高密度互连穿孔中表现更优。验证了HiPIMS在提升TSV溅射沉积质量方面的技术优势，有效降低了TSV晶圆种子层金属厚度，并提供了一种高效、高可靠的解决方案。更多还原

【Abstract】 Targeting the RF signal transmission requirements of three-dimensional integration (Through Silicon Via) in microsystems,and the effects of high-power pulse magnetron sputtering and traditional DC sputtering processes are compared for the high aspect ratio blind hole structure in TSV manufacturing.Experimental results demonstrate that the step coverage rate of PVD seed layers in high-power pulsed magnetron sputtering has been significantly improved by enhancing the plasma ionization efficiency,particularly in high-aspect-ratio (10:1) Vias.The technical advantages of HiPIMS in TSV sputtering deposition is confirmed,which effectively reduces the metal thickness of t seed layers on TSV wafer,and provides an efficient and highly reliable solution.更多还原