【摘要】 三维电感器凭借小体积、低损耗和高电感值等优势在MEMS传感器、射频MEMS及储能器件等领域得到广泛应用。传统三维MEMS电感器的支撑结构为高深宽比立柱，通常依赖UV-LIGA光刻或硅通孔(TSV)技术制备，工艺流程复杂。为简化制备流程，该文基于MEMS工艺设计并制作了一种以非光敏聚酰亚胺为支撑层的三维MEMS拱形电感器。该器件采用高磁导率Co基非晶合金丝作为磁芯，显著提升了电性能；通过优化显影时间提高聚酰亚胺侧壁平整度，在无需高深宽比立柱支撑的情况下制备了拱形线圈，简化工艺流程的同时提高了器件的稳定性。制备出的MEMS拱形电感器在78.5 MHz的激励频率下电感值达到1881 nH。在20～120℃温度范围内，电性能的变化不超过3%。更多还原

【Abstract】 Three-dimensional inductors, owing to their small footprint, low loss, and high inductance, are widely applied in MEMS sensors, RF MEMS, and energy storage systems. Traditional three-dimensional MEMS inductors rely on high aspect ratio pillars for support and are typically fabricated by UV-LIGA lithography or through-silicon-via(TSV) technology, resulting in a complex process. To simplify the fabrication, this paper presented a MEMS-based method for three-dimensional arch inductor supported by a non-photosensitive polyimide layer. The inductor employed a high-permeability, Co-based amorphous alloy wire as the magnetic core, significantly enhancing its electrical performance. By optimizing development time to improve the smoothness of polyimide sidewalls, an arch coil was fabricated without high aspect ratio pillars, thus simplifying the process and enhancing device stability. The fabricated MEMS arch inductor achieves an inductance of 1881 nH at 78.5 MHz, with its electrical performance variation within 3% over the temperature range from 20 ℃ to 120 ℃.更多还原