【摘要】 绝缘体上硅(SOI)器件在200～300℃高温下性能优异，但长期高温会导致引线键合可靠性下降。为研究长期高温对高可靠SOI器件键合系统的影响，以XX256HT型SOI静态存储器(SRAM)为研究对象，针对其中金-铝与铝-铝两种键合界面，开展了250,275,300℃高温贮存加速退化试验，对比研究两种键合点的键合拉力强度退化规律。通过核密度估计建立退化量分布模型，拟合可靠度函数，结合阿伦尼乌斯(Arrhenius)模型预测寿命。结果表明：金-铝键合较铝-铝键合退化更快；键合拉力强度随温度升高、贮存时间增加而下降；225℃下，以金-铝键合为制约因素的XX256HT型SRAM键合寿命为3.9931×10~3 h。该研究揭示了高温下金-铝/铝-铝键合界面的可靠性差异，为SOI器件高温键合寿命预测提供了理论依据。更多还原

【Abstract】 Silicon-on-insulator(SOI) devices exhibit excellent performance at high temperatures(200-300 ℃), but prolonged thermal exposure degrades wire bonding reliability. To investigate the long-term high-temperature effects on bonding systems of SOI devices, the XX256HT SOI static random-access memory(SRAM) was selected as the test subject. The accelerated degradation tests were conducted at 250 ℃, 275 ℃, and 300 ℃ to compare the bond strength degradation behavior of Au-Al and Al-Al bonding interfaces. A degradation distribution model was established using kernel density estimation, the reliability functions were fitted, and lifetime prediction was performed based on the Arrhenius model. The results indicate that Au-Al bonds degrade faster than Al-Al bonds, and the bond strength decreases with increasing temperature and storage time. At 225 ℃, the bonding system lifetime of the XX256HT SRAM, limited by Au-Al bond degradation, is 3.9931×10~3 h. This study reveals the reliability differences between Au-Al and Al-Al bonding interfaces under high-temperature conditions and provides a theoretical basis for predicting the bonding lifetime of high-reliability SOI devices.更多还原