【摘要】 Ru阻挡层化学机械抛光主要面临着Ru去除速率较低和难以实现较好的Cu/Ru/TEOS去除速率选择比两项问题。为了解决上述问题,基于KIO₄-K₂S₂O₈双氧化剂体系,通过引入新型抑制剂AMT进一步提升Ru去除速率及表面质量,并改善Cu/Ru/TEOS选择比。抛光实验验证了在KIO₄-K₂S₂O₈体系中引入AMT后可以调节Cu/Ru/TEOS的去除速率选择比。通过AFM测试将引入AMT前后Ru的表面质量进行对比,表明在KIO₄-K₂S₂O₈体系中引入AMT能够改善Cu/Ru的表面粗糙度。碟形坑、蚀坑测试实验验证了AMT的引入对碟形坑、蚀坑具有修正作用并揭示了AMT在Ru阻挡层CMP过程中的作用机理。最终Cu/Ru/TEOS速率选择比达到1∶1.3∶1.7,并且此时碟形坑、蚀坑的修正效果较好,修正值分别为54.4nm和49.4nm。更多还原

【Abstract】 For Ru barrier layer chemical mechanical polishing,the main challenges are low Ru removal rate and difficulty in achieving a good Cu/Ru/TEOS removal rate selectivity ratio.In order to solve the above problems,a new inhibitor AMT was introduced based on the KIO₄-K₂S₂O₈ dual oxidant system to enhance the Ru removal rate and surface quality and improve the Cu/Ru/TEOS selectivity ratio.The polishing experiment confirmed that the removal rate selectivity of Cu/Ru/TEOS could be adjusted by introducing AMT into the KIO₄-K₂S₂O₈ system.The surface quality of Ru before and after the introduction of AMT was compared using AFM testing,and the result showed that the surface roughness of Cu/Ru was improved by the introduction of AMT in the KIO₄-K₂S₂O₈ system.Dishing pit and etching pit testing confirmed that the introduction of AMT had a corrective effect on the dishing pits and etching pits,and the role of AMT in the CMP process of the Ru barrier layer was revealed.The final Cu/Ru/TEOS rate selectivity ratio reaches 1∶1.3∶1.7,and at this time,the correction effect of dishing pits and etching pits are good,with correction values of 54.4nm and 49.4nm,respectively.更多还原