【摘要】 为了提高多晶硅去除速率，从化学作用和机械作用两个方面揭示嘧啶在多晶硅表面的影响机理。一方面，X射线光电子能谱实验表明嘧啶的加入在多晶硅表面产生吸附，促进了Si-Si键的极化断裂以及Si-O键的形成，加速了多晶硅表面软质层的形成以及机械作用对其的去除。另一方面，Zeta电位、摩擦力、温度数据表明嘧啶水解产生的嘧啶阳离子降低了SiO₂磨料之间的静电斥力，导致表面间的摩擦力增大，加强了机械作用；同时温度升高加快了CMP过程中化学反应的速率，从而促进了化学反应的进行。因此，嘧啶的加入既提高了化学作用，也加强了机械作用，使多晶硅去除速率提高了约2.8倍。更多还原

【Abstract】 In order to improve the removal rate of polysilicon, the mechanism of pyrimidine on the polysilicon surface was revealed from chemical and mechanical aspects. On the one hand, X-ray photoelectron spectroscopy experiments showed that pyrimidine was adsorbed on the surface of polycrystalline silicon, by which the polarization fracture of Si-Si bond and the formation of Si-O bond was promoted, and the formation and mechanical removal rate of this soft layer on the surface of polycrystalline silicon was accelerated. On the other hand, Zeta potential and friction data showed that the pyrimidine cation produced by pyrimidine hydrolysis reduced the electrostatic repulsion between SiO₂ abrasives, resulting in increasing friction between surfaces and polysilicon during CMP. In addition, the increase of temperature accelerated the rate of chemical reaction in the CMP process, thus the chemical reaction was promoted. Therefore, the addition of pyrimidine not only improves the chemical effect, but also strengthens the mechanical effect, As a result, the removal rate of polysilicon is increased by about 2.8 times.更多还原