【摘要】 有效栅长、有效栅宽和沟道电阻等AlGaN/GaN高电子迁移率晶体管(HEMT)参数对于工艺控制和器件设计非常重要.基于AlGaN/GaN HEMT器件源漏之间的总电阻与栅长及栅宽的倒数之间的线性关系，提出了一种简单方法提取有效栅长和有效栅宽.制作了两组AlGaN/GaN HEMT器件，这两组器件的源漏间距为80μm,栅源间距为10μm.其中一组器件固定栅宽为400μm,栅长分别为10、20、30、40、50、60μm;另一组器件固定栅长为40μm,栅宽分别为200、300、400、500、600、800μm.通过研究源漏之间的总电阻随栅长和栅宽变化规律，获得栅长与有效栅长的差值为0.489 89μm,栅宽与有效栅宽的差值为-11.121 91μm.更多还原

【Abstract】 The parameters of AlGaN/GaN high electron mobility transistor(HEMT), such as effective gate length, effective gate width and channel resistance, are crucial for process control and device design. Based on the linear relationship of the total resistance between the source and drain of AlGaN/GaN HEMT devices with gate length and the reciprocal of gate width, a simple method is proposed to extract effective gate length and effective gate width. Two sets of AlGaN/GaN HEMT devices with source/drain spacing of 80 μm and gate/source spacing of 10 μm are fabricated. One set of devices has a fixed gate width of 400 μm and gate lengths of 10, 20, 30, 40, 50 and 60 μm, respectively; the other set of devices has a fixed gate length of 40 μm and gate widths of 200, 300, 400, 500, 600 and 800 μm, respectively. By studying the variation law of total resistance between the source and drain with gate length and gate width, it is found that the difference between the gate length and the effective gate length is 0.489 89 μm, and the difference between the gate width and the effective gate width is-11.121 91 μm.更多还原