【摘要】 碳化硅(SiC)作为世界公认的替代硅(Si)的下一代半导体材料,具有耐压高、开关速度快、开关损耗小的优势,是实现车用电机控制器功率密度提升的关键要素。该文面向SiC电机驱动控制器更高工作温度、更高功率密度、更高可靠性运行的前瞻需求,首先通过高密度自动化布局对功率模块、支撑电容以及母排进行设计,在满足电气杂散参数、热耦合参数约束的前提下,以体积最小为设计原则进行主要功率组件的协同优化设计;应用无源与有源相结合的混合型滤波器进一步降低控制器整体尺寸;在完成功率电路小型化设计的基础上,突破SiC模块结温在线监测方法,通过主动热管理技术实现结温闭环控制下的最大功率输出。基于上述研究成果,开发出105℃环境温度下,峰值功率127 kW、功率密度47.8 kW/L、通过传导电磁干扰等级3的全SiC电机驱动控制器。更多还原

【Abstract】 This paper presents a comprehensive design methodology for a silicon carbide(SiC) power controller capable of high-temperature operation(105℃ ambient), high power density, and exceptional reliability. Building upon existing SiC controller design experience(85℃ ambient temperature, 37.1 kW/L power density), the design and optimization were conducted in three key areas: automated system layout optimization, compact electromagnetic compatibility(EMC) filters, and an active thermal management system based on junction temperature monitoring. These advancements reduced the overall size of the SiC controller while simultaneously enhancing both high-temperature performance and operational reliability. An automated system layout optimization was developed with a focus on three critical components-power modules, DC-link capacitors, and busbars-which were found to collectively account for more than 50% of the controller’s total volume. First, a sequence-pair model was established to characterize chip placement and orientation, followed by the definition of a fitness evaluation function for power modules. An artificial neural network(ANN)-based optimization algorithm was then implemented, resulting in the development of a highly compact 1 200 V/600 A SiC power module. Next, conventional two-dimensional(2D) layout rules were extended to a three-dimensional(3D) component arrangement strategy. A 3D escape-line technique was adopted to successfully address interconnection challenges in complex spatial configurations. Through these innovations, a significant reduction in power component dimensions was achieved without compromising electrical performance or thermal coupling effects. To address the dual EMC challenges arising from SiC’s fast switching speeds and variable frequency operation, a hybrid active-passive filter solution was adopted to ensure harmonic suppression while smaller size. The active filter section, incorporating current sampling, current feedback, feedforward regulationand analog control, improved low-frequency interference insertion loss by approximately 10 dB. Compared to traditional passive filter solutions, the hybrid approach reduced total volume by 17%. For reliable high-temperature operation, this paper first proposes a MOSFET junction temperature monitoring method based on third-quadrant body diode forward voltage. This method overcame the limitations of conventional on-state voltage monitoring approaches, which typically exhibit insufficient temperature sensitivity at low currents and are susceptible to positive bias temperature instability(PBTI). Building upon the existing controller functions, a highly multiplexed high-resolution junction temperature sampling circuit was designed, achieving high-precision online junction temperature(T_J) monitoring across the entire operating range. Using the T_J as feedback, a T_J closed-loop control system based on switching frequency regulation was implemented. Simulation results demonstrate that, compared with conventional fixed switching frequency solutions, the proposed approach increases peak power by 20% without compromising reliability. Through integration of these three key technologies, a 105℃ ambient-tolerant SiC controller prototype was successfully developed. Experimental validation demonstrated a peak power output of 127 kW, power density of 47.8 kW/L, maximum room-temperature efficiency of 99.85%, and full compliance with GB/T 18655 Class 3 EMC standards across the entire operational envelope.更多还原