【摘要】 氮化铝兰姆波谐振器（AlN LWR）因其高相速度、适中的有效机电耦合系数(k²_eff)及可实现片上多频段集成等优势获得了关注，成为微机电系统（MEMS）中广泛研究的关键器件。品质因数（Q）和k²_eff对由谐振器单元组成的射频滤波器和传感器的性能指标有着直接影响，因此优化相关参数对于提高器件性能至关重要。综述了AlN LWR的基本工作原理、关键性能参数及其优化策略。通过最新的研究实例，阐述了提升Q值、k²_eff及抑制杂散信号的措施。最后，阐述了AlN LWR目前面临的挑战和对未来的展望。更多还原

【Abstract】 Aluminum nitride Lamb wave resonator（AlN LWR）gathers significant attention for its advantages of high phase velocity, moderate effective electromechanical coupling coefficient(k²_eff),and enabling on-chip multi-band integration, making it a key component widely studied in micro-electro-mechanical systems（MEMS）.The quality factor（Q） and k²_eff directly influence the performance of radio-frequency filters and sensors composed of resonator units, and thus optimizing related parameters is crucial for enhancing device performance.Basic working principles, key performance parameters and their optimization strategies for AlN LWR are reviewed.Methods to enhance Q factor, k²_eff,and suppress spurious signals are expounded based on the latest research.Finally, the challenges that AlN LWR is facing currently and future prospects are elaborated.更多还原