【摘要】 衬底的表面质量对卤化物气相外延（HVPE）法生长的同质外延薄膜的质量至关重要。研究了（001）面β-Ga₂O₃单晶衬底研磨和抛光工艺中研磨盘材质、研磨压力、抛光垫种类等参数对材料去除速率（v_R）、表面粗糙度（R_a）和表面质量的影响。实验结果表明，采用树脂铜盘、树脂锡盘和SUBA800抛光垫配合3μm粒径的多晶金刚石液研磨，均可以实现塑性域去除，v_R分别为3.13、1.23、0.25μm/min,R_a分别为16.2、13.2和7.81 nm。在化学机械抛光（CMP）过程中，抛光垫的物性参数直接影响v_R和表面质量，采用阻尼布可以实现R_a小于0.2 nm、无亚表面损伤的原子级平整表面。采用此衬底进行HVPE法生长的同质外延薄膜形貌均匀，未发现加工相关的缺陷。更多还原

【Abstract】 The surface quality of the substrate is crucial to the quality of homoepitaxial films grown by halide vapor phase epitaxy（HVPE） method.The effects of parameters such as lapping plate material,lapping pressure and polishing pad type on the material removal rate（v_R）,surface roughness（R_a） and surface quality in the lapping and polishing processes of（001）-oriented β-Ga₂O₃ single crystal substrates were studied.The experimental results show that plastic domain removal can be achieved by lapping with resin copper plate,resin tin plate and SUBA800 polishing pad combined with 3 μm grain size polycrystalline diamond slurry,all of which can achieve v_R of 3.13,1.23 and 0.25 μm/min respectively,and R_a of16.2,13.2 and 7.81 nm respectively.During the chemical mechanical polishing（CMP） process,the physical parameters of the polishing pad directly influence the v_R and surface quality,and by employing the damping cloth,an atomically flat surface with R less than 0.2 nm and the absence of subsurface damage can be obtained.The homoepitaxial films grown by the HVPE method using this substrate have a well-distributed morphology with no processing-related defects observed.更多还原