【摘要】 低缺陷掺硫磷化铟晶片是光电器件的主要衬底材料，制备6英寸（1英寸=2.54 cm）大直径单晶是降低器件成本的重要手段之一。通过分析6英寸低缺陷掺硫磷化铟单晶生长过程的杂质效应机理、热应力和热场温度分布，并对掺硫磷化铟晶体头、中、尾切片进行电学性能、位错密度及应力测试，得到载流子浓度与掺杂量、迁移率及位错（腐蚀坑）密度之间的关系，以及掺硫磷化铟晶体易开裂的原因。优化了适合生长6英寸低缺陷掺硫磷化铟单晶的半封闭可调热场系统，通过增加热屏罩，提高了炉体上部空间的气氛温度，降低了晶体内部的温度梯度，从而有效降低了晶体内的残余应力。确定了InP中In₂S₃的掺杂质量分数最大限度(≤300×10^-6),得到了低位错密度(<3 000 cm^-2)的磷化铟晶体，并有效地降低了晶体开裂的概率，实现了6英寸低缺陷掺硫磷化铟单晶的重复生长。更多还原

【Abstract】 Low defect S-doped InP wafers are the primary substrate materials for optoelectronic devices, and the preparation of 6 inch（1 inch=2.54 cm） large-diameter single crystal is one of the critical approaches to reduce device costs. By analyzing the impurity effect mechanism, thermal stress and melt temperature fluctuations during the growth process of 6 inch S-doped InP single crystals, and testing the electrical performance, dislocation（etch pit） density and stress on head, middle and tail sections of S-doped InP crystals, the relationships among carrier concentration, doping content, mobility and dislocation density were obtained, as well as the reasons for the susceptibility to cracking of the S-doped InP crystals. The semi-sealed adjustable thermal field system suitable for growing 6 inch S-doped InP single crystals was optimized. By implementing a thermal barrier, the ambient temperature in the upper chamber of the furnace is increased, and the temperature gradient within the crystal is lowered, thus effectively reducing the residual stress in the crystal. The maximum doping mass fraction of In₂S₃ in InP(≤300×10^-6) is determined, the low dislocation density(<3 000 cm^-2) InP crystals are successfully produced, and the probability of crystal cracking is effectively reduced. The reproducible growth of 6 inch low dislocation density S-doped InP single crystals is achieved.更多还原