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HgCdTe红外焦平面质子位移损伤效应研究
Investigation of the Displacement Damage Effects in HgCdTe Infrared Focal Plane Arrays Induced by Proton Radiation
【摘要】 针对红外探测器在空间应用中受高能粒子辐照导致性能衰退的问题,利用质子辐照实验,开展了位移损伤对HgCdTe红外焦平面关键参数影响的研究。通过对比辐照前后红外焦平面的性能变化,结合半导体辐射效应理论,分析了位移损伤对HgCdTe红外焦平面特性的影响机制。结果表明,HgCdTe红外焦平面经过质子辐照实验后,暗电流、噪声和盲元数量均有增大,且增幅随辐照注量的增加而增大。该工作可为深入开展HgCdTe红外探测器辐射损伤效应及损伤机理提供重要参考。
【Abstract】 To address the issue of performance degradation in infrared detectors caused by highenergy particle irradiation in space applications, this study investigates the effects of displacement damage on key parameters of HgCdTe infrared focal plane arrays through proton irradiation experiments. By comparing the performance of the focal plane before and after irradiation and applying semiconductor radiation effect theory, the mechanisms by which displacement damage affects the characteristics of HgCdTe infrared focal planes are analyzed. The results indicate that proton irradiation leads to increased dark current, noise, and number of blind elements, with the extent of degradation proportional to the radiation fluence. These findings offer a helpful reference for future research on the radiation effects in HgCdTe infrared detectors.
【Key words】 HgCdTe; infrared focal plane array; proton radiation; displacement damage; annealing effect;
- 【文献出处】 半导体光电 ,Semiconductor Optoelectronics , 编辑部邮箱 ,2025年04期
- 【分类号】TN215
- 【下载频次】14