【摘要】 碳化硅陶瓷是一种应用广泛的高热导率材料。结合国内外研究，讨论了碳化硅陶瓷的导热机理和影响因素，认为杂质、气孔和晶界是影响碳化硅陶瓷热导率的主要因素，减少杂质、气孔和晶界有利于提高热导率。给出了制备高热导率碳化硅陶瓷的建议：提高碳化硅陶瓷致密度以减少气孔；增大碳化硅晶粒尺寸以减少晶界；在不降低致密度的前提下，降低烧结助剂含量、减少烧结助剂种类，且添加的烧结助剂不固溶进入碳化硅晶格、烧结助剂之间不反应形成结构复杂的低热导率相，烧结助剂容易结晶晶化，不残留或少残留玻璃相；添加高热导率第二相。更多还原

【Abstract】 SiC ceramic is widely used as a kind of high thermal conductivity material. Based on the research progress at home and abroad, this paper discusses the thermal conductivity mechanism and influencing factors of SiC ceramic. It is proposed that impurities, pores and grain boundaries are the main factors affecting the thermal conductivity of SiC ceramic. And reducing impurities, pores and grain boundaries is conducive to improve thermal conductivity. The suggestion for preparing high thermal conductivity SiC ceramic is to increasing the bulk density of SiC ceramic to reduce porosity, increasing the SiC grain size to reduce grain boundaries, reducing the content and types of sintering additives without decreasing the bulk density, ensuring that the sintering additives do not dissolve into the SiC lattice and react with each other to form low thermal conductivity phases with a complex structure, ensuring that the sintering additives are easy to crystallize with little or no residual glass phases, and by adding a second phase with high thermal conductivity.更多还原