A universal resist-assisted metal transfer method for 2D semiconductor contacts

【摘要】 With the explosive exploration of two-dimensional（2D） semiconductors for device applications, ensuring effective electrical contacts has become critical for optimizing device performance. Here, we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO₂/Si substrate, which can be easily transferred onto 2D semiconductors to form van der Waals（vdW） contacts. In this method, polymethyl methacrylate（PMMA） serves both as an electron resist for electrode patterning and as a sacrificial layer. Contacted with our transferred electrodes, MoS₂ exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions, while In Se shows pronounced ambipolarity. Additionally, using α-In₂Se₃ as an example, we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors. Finally,the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.更多还原

【Abstract】 With the explosive exploration of two-dimensional（2D） semiconductors for device applications, ensuring effective electrical contacts has become critical for optimizing device performance. Here, we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO₂/Si substrate, which can be easily transferred onto 2D semiconductors to form van der Waals（vdW） contacts. In this method, polymethyl methacrylate（PMMA） serves both as an electron resist for electrode patterning and as a sacrificial layer. Contacted with our transferred electrodes, MoS₂ exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions, while In Se shows pronounced ambipolarity. Additionally, using α-In₂Se₃ as an example, we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors. Finally,the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.更多还原