Lewis acid-doped transition metal dichalcogenides for ultraviolet–visible photodetectors

【摘要】 Ultraviolet photodetectors（UV PDs） are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides（TMDs）,which can effectively be used to extend the optical response range.The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl₄ as a light absorption layer on the surface of WS2,significantly enhancing its UV photodetection performance.Under 365 nm laser irradiation,WS₂ PDs exhibit response speed of 24 ms/20 ms,responsivity of 660 mA/W,detectivity of 3.3 × 10¹¹ Jones,and external quantum efficiency of 226%.Moreover,we successfully apply this doping method to other TMDs materials（such as MoS₂,MoSe₂,and WSe₂）and fabricate WS₂ lateral p-n heterojunction PDs.更多还原

【Abstract】 Ultraviolet photodetectors（UV PDs） are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides（TMDs）,which can effectively be used to extend the optical response range.The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl₄ as a light absorption layer on the surface of WS2,significantly enhancing its UV photodetection performance.Under 365 nm laser irradiation,WS₂ PDs exhibit response speed of 24 ms/20 ms,responsivity of 660 mA/W,detectivity of 3.3 × 10¹¹ Jones,and external quantum efficiency of 226%.Moreover,we successfully apply this doping method to other TMDs materials（such as MoS₂,MoSe₂,and WSe₂）and fabricate WS₂ lateral p-n heterojunction PDs.更多还原