Single crystal growth and transport properties of narrow-bandgap semiconductor RhP₂

【摘要】 We report the growth of high-quality single crystals of RhP₂,and systematically study its structure and physical properties by transport,magnetism,and heat capacity measurements.Single-crystal x-ray diffraction reveals that RhP₂ adopts a monoclinic structure with the cell parameters a=5.7347（10） ?,b=5.7804（11） ?,and c=5.8222（11） ?,space group P2₁/c（No.14）.The electrical resistivity ρ（T） measurements indicate that RhP₂ exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions,respectively.The temperaturedependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration.We find that RhP₂ has a high mobility μ_e～210 cm²·V^-1·s^-1 with carrier concentrations n_e～3.3 ×10¹⁸ cm³ at 300 K with a narrow-bandgap feature.The high mobility μ_e reaches the maximum of approximately 340 cm²·V^-1·s^-1 with carrier concentrations n_e ～2× 10¹⁸ cm^-3 at 100 K.No magnetic phase transitions are observed from the susceptibility χ（T）and specific heat C_p（T） measurements of RhP₂.Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.更多还原

【Abstract】 We report the growth of high-quality single crystals of RhP₂,and systematically study its structure and physical properties by transport,magnetism,and heat capacity measurements.Single-crystal x-ray diffraction reveals that RhP₂ adopts a monoclinic structure with the cell parameters a=5.7347（10） ?,b=5.7804（11） ?,and c=5.8222（11） ?,space group P2₁/c（No.14）.The electrical resistivity ρ（T） measurements indicate that RhP₂ exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions,respectively.The temperaturedependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration.We find that RhP₂ has a high mobility μ_e～210 cm²·V^-1·s^-1 with carrier concentrations n_e～3.3 ×10¹⁸ cm³ at 300 K with a narrow-bandgap feature.The high mobility μ_e reaches the maximum of approximately 340 cm²·V^-1·s^-1 with carrier concentrations n_e ～2× 10¹⁸ cm^-3 at 100 K.No magnetic phase transitions are observed from the susceptibility χ（T）and specific heat C_p（T） measurements of RhP₂.Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.更多还原