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Magnetic domain structures in ultrathin Bi2Te3/CrTe2 heterostructures

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【作者】 夏体瑞杨笑天张逸凡刘馨琪蔡新雨刘畅姚岐寇煦丰王文波

【Author】 Tirui Xia;Xiaotian Yang;Yifan Zhang;Xinqi Liu;Xinyu Cai;Chang Liu;Qi Yao;Xufeng Kou;Wenbo Wang;School of Physical Science and Technology, Shanghai Tech University;School of Information Science and Technology, Shanghai Tech University;Shanghai Tech Laboratory for Topological Physics, Shanghai Tech University;Department of Materials Science, Fudan University;

【通讯作者】 姚岐;寇煦丰;王文波;

【机构】 School of Physical Science and Technology, Shanghai Tech UniversitySchool of Information Science and Technology, Shanghai Tech UniversityShanghai Tech Laboratory for Topological Physics, Shanghai Tech UniversityDepartment of Materials Science, Fudan University

【摘要】 Chromium tellurium compounds are important two-dimensional van der Waals ferromagnetic materials with high Curie temperature and chemical stability in air,which is promising for applications in spintronic devices.Here,highquality spin-orbital-torque(SOT) device,Bi2Te3/CrTe2 heterostructure was epitaxially grown on Al2O3(0001) substrates.Anomalous Hall measurements indicate the existence of strong ferromagnetism in this device with the CrTe2 thickness down to 10 nm.In order to investigate its micromagnetic structure,cryogenic magnetic force microscope(MFM) was utilized to measure the magnetic domain evolutions at various temperatures and magnetic fields.The virgin domain state of the device shows a worm-like magnetic domain structure with the size around 0.6 μm-0.8 μm.Larger irregular-shape magnetic domains(> 1 μm) can be induced and pinned,after the field is increased to coercive field and ramped back to low fields.The temperature-dependent MFM signals exhibit a nice mean-field-like ferromagnetic transition with Curie temperature around 201.5 K,indicating a robust ferromagnetic ordering.Such a device can be potentially implemented in future magnetic memory technology.

【Abstract】 Chromium tellurium compounds are important two-dimensional van der Waals ferromagnetic materials with high Curie temperature and chemical stability in air,which is promising for applications in spintronic devices.Here,highquality spin-orbital-torque(SOT) device,Bi2Te3/CrTe2 heterostructure was epitaxially grown on Al2O3(0001) substrates.Anomalous Hall measurements indicate the existence of strong ferromagnetism in this device with the CrTe2 thickness down to 10 nm.In order to investigate its micromagnetic structure,cryogenic magnetic force microscope(MFM) was utilized to measure the magnetic domain evolutions at various temperatures and magnetic fields.The virgin domain state of the device shows a worm-like magnetic domain structure with the size around 0.6 μm-0.8 μm.Larger irregular-shape magnetic domains(> 1 μm) can be induced and pinned,after the field is increased to coercive field and ramped back to low fields.The temperature-dependent MFM signals exhibit a nice mean-field-like ferromagnetic transition with Curie temperature around 201.5 K,indicating a robust ferromagnetic ordering.Such a device can be potentially implemented in future magnetic memory technology.

【基金】 Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403000);the National Natural Science Foundation of China (Grant No. 12374161);the Fund from the Science and Technology Commission of Shanghai Municipality (Grant No. 21PJ410800);the support from the National Natural Science Foundation of China (Grant No. 92164104);the Rising Star Program of Shanghai (Grant No. 21QA1406000);the Open Fund of State Key Laboratory of Infrared Physics
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2024年08期
  • 【分类号】O469
  • 【下载频次】4
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