Magnetic and electrical transport properties in GdAlSi and SmAlGe

【摘要】 We conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crystals,which possess a LaPtSi-type structure（space group I4₁md）.The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature（T_N）.For GdAlSi,a hysteresis loop is observed in the magnetization and magnetoresistance curves within the ab plane when the magnetic field is applied below T_N,which is around32 K.Notable specific heat anomalies are detected at 32 K for GdAlSi and 6 K for SmAlGe,confirming the occurrence of magnetic transitions.In addition,the extracted magnetic entropy at high temperatures is consistent with the theoretical value of Rln（2J+1） for J=7/2 in Gd³⁺ and J=5/2 in Sm³⁺,respectively.SmAlGe also exhibits Schottky-like specific heat contributions.Additionally,both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.更多还原

【Abstract】 We conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crystals,which possess a LaPtSi-type structure（space group I4₁md）.The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature（T_N）.For GdAlSi,a hysteresis loop is observed in the magnetization and magnetoresistance curves within the ab plane when the magnetic field is applied below T_N,which is around32 K.Notable specific heat anomalies are detected at 32 K for GdAlSi and 6 K for SmAlGe,confirming the occurrence of magnetic transitions.In addition,the extracted magnetic entropy at high temperatures is consistent with the theoretical value of Rln（2J+1） for J=7/2 in Gd³⁺ and J=5/2 in Sm³⁺,respectively.SmAlGe also exhibits Schottky-like specific heat contributions.Additionally,both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.更多还原