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Reanalysis of energy band structure in the type-II quantum wells

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【作者】 李欣欣邓震江洋杜春花贾海强王文新陈弘

【Author】 Xinxin Li;Zhen Deng;Yang Jiang;Chunhua Du;Haiqiang Jia;Wenxin Wang;Hong Chen;Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences;Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences;The Yangtze River Delta Physics Research Center;Songshan Lake Materials Laboratory;

【通讯作者】 陈弘;

【机构】 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesCenter of Materials and Optoelectronics Engineering, University of Chinese Academy of SciencesThe Yangtze River Delta Physics Research CenterSongshan Lake Materials Laboratory

【摘要】 Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region(corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.

【Abstract】 Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region(corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.

【基金】 Project supported by the National Natural Science Foundation of China (Grant Nos. 61991441 and 62004218);the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01000000);Youth Innovation Promotion Association Chinese Academy of Sciences (Grant No. 2021005)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2024年06期
  • 【分类号】O469
  • 【下载频次】3
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