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Physical mechanism of secondary-electron emission in Si wafers

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【Author】 Yanan Zhao;Xiangzhao Meng;Shuting Peng;Guanghui Miao;Yuqiang Gao;Bin Peng;Wanzhao Cui;Zhongqiang Hu;State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education,Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering,Xi’an Jiaotong University;College of Aeronautics, Nanjing University of Aeronautics and Astronautics;National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology (Xi’an);Department of Physics, School of Physics and Electronic Information, Anhui Normal University;

【通讯作者】赵亚楠;

【机构】 State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education,Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering,Xi’an Jiaotong University； College of Aeronautics, Nanjing University of Aeronautics and Astronautics； National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology (Xi’an)； Department of Physics, School of Physics and Electronic Information, Anhui Normal University；

【摘要】 CMOS-compatible RF/microwave devices, such as filters and amplifiers, have been widely used in wireless communication systems. However, secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si) wafers, especially in the high-frequency range. In this paper, we have studied the major factors that influence the secondary-electron yield(SEY) in commercial Si wafers with different doping concentrations. We show that the SEY is suppressed as the doping concentration increases, corresponding to a relatively short effective escape depth λ. Meanwhile, the reduced narrow band gap is beneficial in suppressing the SEY, in which the absence of a shallow energy band below the conduction band will easily capture electrons, as revealed by first-principles calculations. Thus, the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.更多还原

【Abstract】 CMOS-compatible RF/microwave devices, such as filters and amplifiers, have been widely used in wireless communication systems. However, secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si) wafers, especially in the high-frequency range. In this paper, we have studied the major factors that influence the secondary-electron yield(SEY) in commercial Si wafers with different doping concentrations. We show that the SEY is suppressed as the doping concentration increases, corresponding to a relatively short effective escape depth λ. Meanwhile, the reduced narrow band gap is beneficial in suppressing the SEY, in which the absence of a shallow energy band below the conduction band will easily capture electrons, as revealed by first-principles calculations. Thus, the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.更多还原

【关键词】 secondary-electron yield； doping concentration； escape depth； Si wafer；
【Key words】 secondary-electron yield； doping concentration； escape depth； Si wafer；

【基金】 Project supported by the Administration of Science, Technology and Industry of National Defense of China (Grant No. HTKJ2021KL504001);the National Natural Science Foundation of China (Grant Nos. 12004297 and 12174364);the China Postdoctoral Science Foundation (Grant No. 2022M712507);the Fundamental Research Funds for the Central Universities (Grant No. xzy01202003);the National 111 Project of China (Grant No. B14040);the support from the Instrument Analysis Center of Xi’an Jiaotong University

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2024年04期

【分类号】O462.2

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