【摘要】 金属原子在半导体材料中的扩散对半导体器件的电阻率、传导率和光电学性能有直接影响。采用飞行时间二次离子质谱分析技术，结合分子动力学模拟方法研究了常用金属原子Al在不同Si基中的扩散深度差异及其温度相关性。实验结果表明，Al在本征、N型以及P型Si基中的扩散深度随温度的升高而增加，其中，Al在P型Si基中的扩散深度大于本征和N型Si基。模拟结果表明，Al在Si基中的扩散深度和扩散系数随温度的升高而增加，温度增高至625 K后其扩散行为更为显著，与实验结果相符。研究表明Al在Si中的扩散行为与Si基的性质及环境温度密切相关。相关研究为深入了解Al在Si基中的扩散及其温度相关性提供了重要基础，同时也为探索其他金属在Si基中的扩散行为以及半导体器件加工工艺的优化提供了新的思路和参考依据。更多还原

【Abstract】 The diffusion of metallic elements in semiconductor materials has a direct impact on the resistivity, conductivity and optoelectronic properties of semiconductor devices. The differences in the diffusion depths of Al, a commonly used metallic element, in different Si substrates and its temperature dependence are investigated by using time-of-flight secondary ion mass spectrometry(TOSF-SIMS) combined with molecular dynamics simulation. The experimental results show that the diffusion depth of Al in intrinsic, N-type and P-type Si increases with increasing temperature, and the diffusion depth of Al in P-type Si is larger than that in intrinsic and N-type Si. The simulation results show that the diffusion depth and the diffusion coefficient of Al in Si increase with increasing temperature. The diffusion behavior of Al in Si is more significant after the temperature is raised to 625 K, which is in line with the experimental results. The study shows that the diffusion behavior of Al in Si is closely related to the nature of the Si matrix and the ambient temperature. The relevant studies in the paper provide an important foundation for an in-depth understanding of the diffusion of Al in Si and its temperature dependence, and also provide new ideas and references for exploring the diffusion behavior of other metals in Si as well as the optimization of semiconductor device processing.更多还原