【摘要】 利用西安脉冲反应堆(Xi’an pulsed reactor, XAPR)的稳态中子对NPN型双极晶体管(NPN bipolar junction transistor, NPN-BJT)进行中子辐照实验，开展NPN-BJT不同固定发射极电流I_E条件下的中子位移损伤差异研究。研究结果表明：同一I_E条件下，集成NPN-BJT与2N2222A NPN-BJT的电流增益退化都随辐照中子注量的增加呈逐渐增强趋势；在同一中子注量辐照下，随双极晶体管固定I_E的增大，中子辐射损伤常数K_τ降低，中子辐照前后电流增益的变化量减小，晶体管电流增益退化程度减弱，因此在一定范围内，提高固定I_E可在一定程度上增强NPN-BJT抗中子辐射能力。更多还原

【Abstract】 By using the steady-state neutrons of the Xi’an pulsed reactor（XAPR） to conduct neutron irradiation experiment on the NPN bipolar junction transistor（NPN-BJT）,the difference of neutron displacement damage of NPN-BJT with different constant emitter current on XAPR is studied. The results show that under the same I_E, the current gain degradation of the integrated NPN-BJT and the 2N2222A NPN-BJT gradually strengthens with the increase of irradiation neutron flux. Under the same neutron irradiation flux, the neutron radiation damage constant decreases with the increase of fixed constant emitter current, the variation of current gain before and after neutron irradiation diminishes, and the transistor current gain degradation decreases. Therefore, increasing constant emitter current I_E can enhance the anti-neutron irradiation ability of NPN-BJT.更多还原