【摘要】 以玻璃和硅(Si)为衬底，采用射频磁控溅射法在不同溅射压强下制备了SnS薄膜.利用X射线衍射仪对SnS薄膜进行表征分析显示，所有样品均沿(111)面择优生长，溅射压强为0.8 Pa时薄膜结晶性最好；使用场发射扫描电子显微镜对SnS薄膜进行测试，结果表示，随着压强的变化，晶粒结构也随之发生明显变化；采用紫外可见分光光度计对于SnS薄膜进行测量，表明在工作压强0.8 Pa下生长的薄膜具有最大的光学带隙值.该研究结果可为SnS半导体薄膜的应用提供参考.更多还原

【Abstract】 Using radio frequency magnetron sputtering,SnS thin film were prepared on glass and silicon(Si) substrates under different sputtering pressures to investigate the effect of sputtering pressure on the characteristics of SnS thin films.Characterization of SnS thin films using X-ray Diffraction showed that all films grew preferentially along the(111) plane,and the crystallinity of the films was best when the sputtering pressure was 0.8 Pa;Using field emission scanning electron microscopy to test SnS thin films,the results showed that with the change of pressure,the grain structure also underwent significant changes;The measurement of SnS thin films using a UV-Vision-near-infrared spectrophotometer showed that the films grown at a working pressure of 0.8 Pa have the maximum optical bandgap value. The research results can provide reference for the application of SnS semiconductor thin films.更多还原