【摘要】 扫描隧道显微镜具有原子级实空间分辨与原位电子态密度探测能力，是材料表面结构及性质表征的常用工具，特别是在近20年来以石墨烯为代表的二维材料电学性质的研究中发挥了重要作用.本文介绍了扫描隧道显微镜的基本原理以及超高真空低温强磁场扫描隧道显微镜的关键技术，并且以石墨烯量子点的特性为例，介绍了超高真空低温强磁场扫描隧道显微镜在石墨烯量子点的制备、电学性质的表征以及量子点中准束缚态在磁场作用下的演化研究中的应用.更多还原

【Abstract】 Scanning tunneling microscopy(STM) has the ability of atomic-level spatial resolution and in situ detection capability of electronic states, which makes it a commonly used tool for characterizing the surface structure and properties of materials. In particular, STM has played a crucial role in the study of the electrical properties of two-dimensional materials in the past two decades, such as graphene. In this article, the basic principle of STM and the key technologies of ultra-high vacuum, low-temperature, high-magnetic-field scanning tunneling microscopy(UHV-LT-HM-STM) were introduced. Taking the properties of graphene quantum dots as an example, we discussed the application of the UHV-LT-HM-STM in the fabrication of graphene quantum dots, characterization of their electrical properties, and the study of the evolution of quasi-bound states within the quantum dots influenced by the magnetic fields.更多还原