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Interstitial Doping of SnO2 Film with Li for Indium-Free Transparent Conductor

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【作者】 陈兴谦； 李昊臻； 陈伟； 梅增霞； Alexander Azarov； Andrej Kuznetsov； 杜小龙；

【Author】 Xingqian Chen;Haozhen Li;Wei Chen;Zengxia Mei;Alexander Azarov;Andrej Kuznetsov;Xiaolong Du;Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics,Chinese Academy of Sciences;Songshan Lake Materials Laboratory;School of Physical Sciences, University of Chinese Academy of Sciences;Guangdong Sino Prime Technology Co., Ltd.;Department of Physics, Centre for Materials Science and Nanotechnology,University of Oslo;

【通讯作者】 杜小龙;

【机构】 Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics,Chinese Academy of Sciences； Songshan Lake Materials Laboratory； School of Physical Sciences, University of Chinese Academy of Sciences； Guangdong Sino Prime Technology Co., Ltd.； Department of Physics, Centre for Materials Science and Nanotechnology,University of Oslo；

【摘要】 <正>SnO2 films exhibit significant potential as cost-effective and high electron mobility substitutes for In2O3 films.In this study,Li is incorporated into the interstitial site of the SnO2 lattice resulting in an exceptionally low resistivity of 2.028×10-3 Ω·cm along with a high carrier concentration of 1.398×1020cm-3 and carrier mobility of 22.02 cm2/V·s.

【关键词】 Transparent； incorporated； interstitial； resistivity；
【基金】 supported by the Key-Area Research and Development Program of Guangdong Province (Grant No. 2021B0101260001);the Guangdong Basic and Applied Basic Research Foundation (Grant No. 2019A1515110411);partly the INTPART Program at the Research Council of Norway (Grant No. 322382)
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2024年03期
  • 【分类号】O469;TB383.2
  • 【下载频次】4
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