【摘要】 取向硅钢极薄带因超低铁损、高磁感的优良性能成为电力、电子、军事等领域的关键材料。薄带连铸技术的亚快速凝固特性可以使取向硅钢在加工过程中产生高密度抑制剂粒子，解决传统生产流程条件下，极薄带的抑制剂粒子快速粗化导致对基体晶粒的钉扎力减弱、形成不完善二次再结晶组织的问题。高能(HE)晶界对Goss晶粒异常长大有重要作用。在925～950℃高温退火过程中，极薄带的晶粒尺寸变化不大，Goss晶粒周围的HE晶界比例提高；950℃以后，Goss晶粒周围的晶界率先移动，吞并基体晶粒发生异常长大，且其周围的HE晶界比例不断降低，直至1 000℃完成二次再结晶。更多还原

【Abstract】 Ultra-thin grain-oriented silicon steel strip is a key material applying on these fields, such as power, electronics, and military, because of its ultra-low iron loss and high magnetic induction. Sub-rapid solidification characteristic of the strip casting technology contributes to produce high-density inhibitor particles during processing of grain-oriented silicon steel. It helps to solve the problem that the rapid coarsening of inhibitor particles in ultra-thin strip leads to the weakened pinning force exerting on matrix grains, which results in incomplete secondary recrystallization structure. High-energy(HE) grain boundaries play an important role in the abnormal growth of Goss grains. During high-temperature annealing process at 925～950 ℃, the change of grain size of ultra-thin strip is not significant, and the proportions of HE grain boundaries around Goss grains increase. When the temperature is above 950 ℃, the grain boundaries around Goss grains move firstly, thus Goss grains swallow up the matrix grains to form abnormally grown grains. During abnormal growth stage, the proportion of HE grain boundaries surrounding Goss grains decrease continuously until secondary recrystallization is completed at 1 000 ℃.更多还原