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基于共振隧穿二极管的140~220 GHz检波器设计

Design of 110~330 GHz Detector Based on Resonant Tunneling Diode

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【作者】 茶兴增张勇

【Author】 CHA Xingzeng;ZHANG Yong;School of Electronic Science and Engineering, University of Electronic Science and Technology of China;

【机构】 电子科技大学电子科学与工程学院

【摘要】 本文基于AlGaN/GaN双势垒RTD,设计了一款工作频率范围为140~220 GHz的检波器。通过Silvaco Atlas TCAD仿真了该RTD器件,其峰谷电流比PVCR为1.5349、负微分电导GRTD为35.8852 m S,且构建了物理基模型对其进行了表征,实现了较好的拟合,从中选取了直流工作点为-0.575 V。在太赫兹信号输入功率为-30 dBm的条件下,实现了在140~220 GHz频段内,电压灵敏度大于4000 m V/mW,在工作频率170 GHz处大于8923 m V/mW。

【Abstract】 In this paper, a detector with an operating frequency band from 140 to 220 GHz was designed based on an AlGaN/GaN double-barrier resonant tunneling diode(RTD). The RTD device was simulated using Silvaco Atlas TCAD,resulting in a peak-to-valley current ratio(PVCR) of 1.5349 and a negative differential conductance(GRTD) of 35.8852m S. A physical-based model was constructed to characterize the device, achieving a good fit and determining a DC operating point of-0.575 V. With an input terahertz(THz) signal power of-30 dBm, the voltage responsivity was greater than 4000 m V/mW in the 140~220 GHz frequency range, and exceeded 8923 m V/mW at the working frequency of 170GHz.

  • 【文献出处】 微波学报 ,Journal of Microwaves , 编辑部邮箱 ,2024年S1期
  • 【分类号】TN31;TN763.1
  • 【下载频次】33
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