【摘要】 本文主要设计了一款基于GaN MMIC的W波段功率放大模块，该模块主要由功放芯片，弯折波导探针结构和电源偏置PCB板组成。作者首先对弯折波导探针过渡结构进行仿真，仿真结果显示该过渡结构在W全频带回波损耗优于22dB；然后设计腔体结构和电源偏置电路，最后对整个模块进行测试。测试结果显示，该功率放大模块在88～96GHz小信号增益大于12.5dB，输出功率大于31.2dBm。更多还原

【Abstract】 This paper mainly designs a W-band power amplifier module based on Ga N MMIC, which consists of power amplifier chip, bent waveguide probe structure and power bias pcb board. Firstly, the transition structure of the bendable waveguide probe is simulated, and the results show that the return loss of the transition structure is better than 22dB in the W full band. Then the cavity structure and power bias circuit are designed, and finally the whole module is tested. The test results show that the small signal gain of the power amplifier module is greater than 12dB at 88～96GHz, the output power is greater than 1.3W,and the saturated output is greater than 1.5W at 88～96GHz.更多还原